ma3047w silicon planer type constant voltage, constant current, waveform cripper and surge absorption circuit n features l mini type package (4-pin) l two-element wiring in parallel of ma3047 n absolute maximum ratings (ta= 25?c) unit : mm n internal connection unit v v w a mv/?c condition i f =10ma i z = 5ma i z = 5ma v r = 1v i z = 5ma symbol v f v z * 2 r z i r s z * 3 n electrical characteristics (ta= 25?c) * 1 note 1. rated input/output frequency : 5mhz 2. * 1 : the v z value is for the temperature of 25?c. in other cases, carry out the temperature compensation. * 2 : guaranteeed at 20ms after power application * 3 : t j = 25 to 125?c n marking unit ma ma ma ma mw mw w ?c ?c symbol i f(av) i f(av) i frm i frm p tot * 1 p tot * 1 p zsm * 2 t j t stg * 1 with a printed-circuit board * 2 t=100 s, t j =150?c parameter average forward current instanious forward current total power dissipation non-repetitive reverse surge power dissipation junction temperature storage temperature rating 100 75 200 150 200 150 15 150 C 55 to + 150 1 : cathode 1 2 : cathode 2 3 : anode 2 4 : anode 1 mini type package (4-pin) 4 1 32 single double single double single double 2.8 +0.2 ?.3 1.5 +0.25 ?.05 0.65 0.15 0.65 0.15 0.5r 1 2 4 3 0.95 0.95 1.9 0.2 0.6 +0.1 ? 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.1 0.16 +0.1 ?.06 0.4 +0.1 ?.05 0.2 0.4 +0.1 ?.05 1.45 0.1 to 0.3 0.5 2.9 +0.2 ?.05 zener diodes composite elements ma111 parameter forward voltage zener voltage operating resistance reverse current temperature coefficient of zener voltage min 4.4 C 3.5 typ 0.8 4.7 50 C1.4 max 0.9 5.0 80 3 0.2 4.7w
zener diodes composite elements ma3047w i f C v f v f C ta i r C v r i z C v z i r C ta r z C i z c d C v r p tot C ta p zsm C t w 0.01 0 0.2 0.4 0.6 1.0 0.8 1.2 0.1 1 10 100 forward voltage v f ( v ) forward curren i f ( ma ) ta=150?c 100?c ?0?c 25?c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ?0 0 40 80 120 160 200 ambient temperature ta ( ?c ) forward voltage v f ( v ) i f =100ma 10ma 3ma 1 0 1.0 2.0 3.0 4.0 5.0 6.0 10 100 1000 10000 reverse voltage v r ( v ) reverse current i r ( na ) ta=150?c 25?c 100?c 0.001 0 2.0 4.0 6.0 7.0 5.0 3.0 1.0 0.01 0.1 1 10 100 zener voltage v z ( v ) zener current i z ( ma ) ta=150?c ?0?c 25?c 100?c 1 ?0 0 40 80 120 160 200 10 100 1000 10000 ambient temperature ta ( ?c ) reverse current i r ( na ) v r =1v 0.5v 3 10 100 1000 300 30 3000 0.3 1 0.5 3 30 510 50 operating resistance r z ( w ) zener current i z ( ma ) ta=25?c 0 06 145 3 2 20 40 60 80 100 120 140 160 reverse voltage v r ( v ) diode capacitance c d ( pf ) f=1mhz ta=25?c 0 0 240 120 160 80 200 40 320 240 160 80 280 200 120 40 ambient temperature ta ( ?c ) power dissipation p tot ( mw ) heat sink copper foil 0.8mm 10mm pulse width t w ( ms ) non-repetitive reverse surge power dissipation p zsm ( w ) 1 0.03 0.3 3 10 100 1000 0.1 10 130 t w non repetitive p zsm
|